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TIS97_J35Z

Transistors Bipolar (BJT) NPN SS/GPA TO-18 L/F

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SeekIC No. : 00210821 Detail

TIS97_J35Z: Transistors Bipolar (BJT) NPN SS/GPA TO-18 L/F

TIS97_J35Z Data Sheet

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Part Number:
TIS97_J35Z
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/3

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 40 V
Emitter- Base Voltage VEBO : 6 V Maximum DC Collector Current : 0.5 A
DC Collector/Base Gain hfe Min : 250 at 0.1 mA at 5 V Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-92 Packaging : Bulk    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Package / Case : TO-92
Maximum DC Collector Current : 0.5 A
Collector- Emitter Voltage VCEO Max : 40 V
Packaging : Bulk
DC Collector/Base Gain hfe Min : 250 at 0.1 mA at 5 V


Parameters:

Technical/Catalog InformationTIS97_J35Z
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)40V
Current - Collector (Ic) (Max)500mA
Power - Max625mW
DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 100A, 5V
Vce Saturation (Max) @ Ib, Ic-
Frequency - Transition-
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TIS97_J35Z
TIS97_J35Z



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