Transistors Bipolar (BJT) PNP MED PWR/GPA
TIS93_J35Z: Transistors Bipolar (BJT) PNP MED PWR/GPA
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 40 V | ||
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 0.8 A | ||
DC Collector/Base Gain hfe Min : | 100 at 50 mA at 2 V | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-92 | Packaging : | Bulk |
Technical/Catalog Information | TIS93_J35Z |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Current - Collector (Ic) (Max) | 800mA |
Power - Max | 625mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 2V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 50mA |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-92 |
Packaging | Bulk |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | TIS93_J35Z TIS93_J35Z |