TIP42B

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 80 V
Maximum DC Collector Current : 6 A
DC Collector/Base Gain hfe Min : 15
Maximum Operating Frequency : 3 MHz
Packaging : Bulk
Package / Case : TO-220


Description

The TIP42B is designed as complementary silicon plastic power transistor for use in general purpose amplifier and switching applications.

TIP42B has four features. (1)Its collector to emitter saturation voltage would be max 1.5Vdc at Ic=6.0Adc. (2)Its collector to emitter sustaining at Ic=6.0Adc would be min 80Vdc. (3)It has high current gain - bandwidth product which means fT=3.0MHz min at Ic=500mAdc. (4)Compact TO-220 AB package. Those are all the main features.

Some absolute maximum ratings of TIP42B have been concluded into several points as follow. (1)Its collector to emitter voltage would be 80Vdc. (2)Its collector to base voltage would be 80Vdc. (3)Its emitter to base voltage would be 5.0Vdc. (4)Its collector current would be 6Adc for continuous and would be 10Adc for peak. (5)Its base current would be 2.0Adc. (6)Its total power dissipation would be 65W and derate above 25°C would be 0.52W/°C. (7)Its unclamped inductive load energy would be 62.5mJ. (8)Its operaing and storage temperature range would be from -65°C to +150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of TIP42B are concluded as follow. (1)Its collector to emitter sustaining voltage would be min 80Vdc. (2)Its collector cutoff current Iceo would be would be max 0.7mAdc. (3)Its collector cutoff current Ices would be max 400uAdc. (4)Its emitter cutoff current would be max 1.0mAdc. (5)Its DC current gain would be min 30 at Ic=0.3A and would be min 15 and max 75 at Ic=3.0A. (6)Its collector to emitter saturation voltage would be max 1.5Vdc. (7)Its base to emitter on voltage would be max 2.0Vdc. (8)Its current gain - bandwidth product would be min 3.0MHz. (9)Its small signal current gain would be min 20. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!

Parameters:

Technical/Catalog Information	TIP42B
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	6A
Power - Max	65W
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 3A, 4V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 600mA, 6A
Frequency - Transition	3MHz
Current - Collector Cutoff (Max)	400A
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	TIP42B TIP42B TIP42BOS ND TIP42BOSND TIP42BOS