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TIL191A

Features: Gallium-Arsenide-Diode Infrared SourceSource Is Optically Coupled to Silicon npn PhototransistorChoice of One, Two, or Four ChannelsChoice of Three Current-Transfer RatiosHigh-Voltage Electrical Isolation 3.535 Peak (2.5 kV rms)Plastic Dual-In-Line PackagesUL Listed - File #E65085Specifi...

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SeekIC No. : 004519163 Detail

TIL191A: Features: Gallium-Arsenide-Diode Infrared SourceSource Is Optically Coupled to Silicon npn PhototransistorChoice of One, Two, or Four ChannelsChoice of Three Current-Transfer RatiosHigh-Voltage Elec...

TIL191A Data Sheet

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Part Number:
TIL191A
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Gallium-Arsenide-Diode Infrared Source
Source Is Optically Coupled to Silicon npn Phototransistor
Choice of One, Two, or Four Channels
Choice of Three Current-Transfer Ratios
High-Voltage Electrical Isolation 3.535 Peak (2.5 kV rms)
Plastic Dual-In-Line Packages
UL Listed - File #E65085






Specifications

Input-to-output voltage (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±3.535 kV peak or dc (±2.5 kV rms)
Collector-emitter voltage (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 V
Emitter-collector voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 V
Input diode reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 V
Input diode continuous forward current at (or below) 25°C free-air temperature (see Note 3) . . . . . . . 50 mA
Continuous total power dissipation at (or below) 25°C free-air temperature:
Phototransistor (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mW
Input diode plus phototransistor per channel (see Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..200 mW

Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .55°C to 125°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .260°C





Description

These optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per
channel. The TIL191 has a single channel in a 4-pin package, the TIL192 has two channels in an 8-package,
and the TIL193 has four channels in a 16-pin package. The standard devices, TIL191, TIL192, and TIL193, are
tested for a current-transfer ratio of 20% minimum. Devices selected for a current-transfer ratio of 50% and
100% minimum are designated with the suffix A and B respectively.






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