DescriptionThe TIL187-1 is a type of AC-input optocoupler, which is designed for use in AC applications that need very high curr ent transfer ratio and high voltage isolation between input and output. he optocoupler include two GaAs light-emitte r input diodes combined in a reverse-parallel config...
TIL187-1: DescriptionThe TIL187-1 is a type of AC-input optocoupler, which is designed for use in AC applications that need very high curr ent transfer ratio and high voltage isolation between input and outpu...
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The TIL187-1 is a type of AC-input optocoupler, which is designed for use in AC applications that need very high curr ent transfer ratio and high voltage isolation between input and output. he optocoupler include two GaAs light-emitte r input diodes combined in a reverse-parallel configuration and a silicon npn darlington photaotransistor. The TIL187-1 has the base combined for applications where a base signal or base resistor is required.
features of TIL187-1 are: (1)A-C signal input; (2)gallium arsenide dual-diode infrared sources coupled to a silicon NP N darlington phototransistor; (3)plastic dual-in-line package; (4)high voltage electrical isolation, 3.535kV peak; (5)high current transfer ratio, 500% minimum at IF=10mA, up to 1500% minimum at IF=2mA with four catagories; (6)UL recognized.
The absolute maximum ratings and electrical characteristics of the TIL187-1 can be summarized as: (1)input-to-outp ut voltage:±3.535kV peak or dc(±2.5kV rms); (2)collector base voltage: 100V; (3)collector emitter voltage: 55V; (4)emitter collector voltage: 7V, emitter base voltage: 14V; (5)input diode power dissipation at(or below) 25 free-air temperature: 100mA; (6)infared-emitter diode: 150mW; (7)storage temperature range: -55 to 150; (8)lead tem perature 1.6mm from case for 10 seconds: 260. Electrical characteristics: (1)collector-base breakdown voltage(IC= 10uA, IE=0, IF=0): 100V min; (2)collector-emitter breakdown voltage(IC=1mA, IE=0, IF=0): 55V min; (3)emitter base breakdown voltage(IE=10uA, IC=0, IF=0): 14V min; (4)transistor static foeward current transfer ratio(VCE=1V, IC= 10mA, IF=0): 25000, etc.