TIL119

The TIL119 is designed as one kind of gallium arsenide diode infrared source optically coupled to a high-gain silicon NPN darlington-connected phototransistor device that has five points of features:(1)high direct-current transfer ratio: 300% minimum at 10 mA;(2)base lead provided for conventional transistor biasing;(3)high voltage electrical isolation: 1500 V rating;(4)stable over side temperature range;(5)typical applications include remote terminal isolation, SCR and Triac triggers, mechanical relays and pulse transformers.

The absolute maximum ratings of the TILTIL119 can be summarized as:(1)input-to-output RMS voltage: +/- 1.5 kV;(2)collector base voltage: 30 V;(3)collector-emitter voltage: 30 V;(4)emitter-collector voltage: 7 V;(5)emitter-base voltage: 7 V;(6)input-diode reverse voltage: 3 V;(7)input diode continuous forward current at or below 65 free air temperature: 100 mA;(8)continuous power dissipation at 25 free air temperature: 150 or 250 mW;(9)storage temperature range: -55 to +150 ;(10)lead temperature 1.6 mm ( 1/16 inch) from case for 10 seconds: 260 . If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .