Features: • Low-saturation voltage.• Low voltag drive (2.5V).• Enhansment type.• Built-in Gate-to-Emitter protection diode.• Mounting Height 1.1mm, Mounting Area 19.2mm2.• dv / dt guarantee.*Specifications Absolute maximum ratings VCES [V] 400 ...
TIG052TS: Features: • Low-saturation voltage.• Low voltag drive (2.5V).• Enhansment type.• Built-in Gate-to-Emitter protection diode.• Mounting Height 1.1mm, Mounting Area 19.2mm...
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Absolute maximum ratings | |
---|---|
VCES [V] | 400 |
VGES(DC) [V] | 6 |
ICP [A] | 150 |
Electrical characteristics | |
---|---|
VGE(off) min [V] | 0.4 |
VGE(off) max [V] | 1 |
VCE [V] | 10 |
IC [mA] | 1 |
VCE(sat) typ [V] | 3.7 |
VCE(sat) max [V] | 5.5 |
IC [A] | 150 |
VGE [V] | 2.5 |
Cies typ [pF] | 3800 |
VCE [V] | 10 |
f [MHz] | 1 |
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Collector-to-Emitter Voltage |
VCES |
800 |
V | |
Gate-to-Emitter Voltage (DC) |
VGES |
±6 |
V | |
Gate-to-Emitter Voltage (Pulse) |
VGES |
PW1ms |
±8 |
V |
Collector Current (Pulse) |
ICP |
PW500s, duty cycle0.5%, CM=400F, VGE=2.5V |
150 |
A |
Maximum Collector-to-Emitter dv / dt |
dVCE / dt |
VCE320V, starting Tch=25 |
400 |
V / s |
Channel Temperature |
Tch |
150 |
||
Storage Temperature |
Tstg |
-40 to +150 |