Features: • Low-saturation voltage.• 4V drive.• Enhansment type.• Built-in Gate-to-Emitter protection diode.PinoutSpecifications Parameter Symbol Conditions Ratings Unit Collector to-Emitter Voltage VCES 400 V Gate-to-Emitter Voltage (DC) VGES ±6 ...
TIG004SS: Features: • Low-saturation voltage.• 4V drive.• Enhansment type.• Built-in Gate-to-Emitter protection diode.PinoutSpecifications Parameter Symbol Conditions Ratings...
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• Low-saturation voltage.
• 4V drive.
• Enhansment type.
• Built-in Gate-to-Emitter protection diode.
Parameter | Symbol | Conditions | Ratings | Unit |
Collector to-Emitter Voltage |
VCES |
400 | V | |
Gate-to-Emitter Voltage (DC) | VGES | ±6 | V | |
Gate-to-Emitter Voltage (Pulse) | VGES | ±8 | V | |
Collector Current (Pulse) | ICP | PW£500ms, duty cycle£0.5% | 150 | A |
Channel Temperature | Tch | 150 | °C | |
Storage Temperature | Tstg | --40 to +150 | °C |