Features: • Low-saturation voltage.• 4V drive.• Enhansment type.• Built-in Gate-to-Emitter protection diode.• Mounting Height 1.1mm, Mounting Area 19.2mm2.Specifications Parameter Symbol Conditions Ratings Unit Collector-to-Emitter Voltage VCES ...
TIG014TS: Features: • Low-saturation voltage.• 4V drive.• Enhansment type.• Built-in Gate-to-Emitter protection diode.• Mounting Height 1.1mm, Mounting Area 19.2mm2.Specification...
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Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Collector-to-Emitter Voltage |
VCES |
400 |
V | |
Gate-to-Emitter Voltage (DC) |
VGES |
±6 |
V | |
Gate-to-Emitter Voltage (Pulse) |
VGES |
PW1ms |
±8 |
V |
Collector Current (Pulse) |
ICP |
PW500ms, duty cycle0.5% |
150 |
A |
Channel Temperature |
Tch |
150 |
°C | |
Storage Temperature |
Tstg |
-40 to +150 |
°C |