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TIC226M

Features: 8 A RMS, 70 A PeakGlass Passivated Wafer400 V to 800 V Off-State VoltageMax I of 50 mA (Quadrants 1 - 3) GTPinoutSpecifications RATING SYMBOL VALUE UNIT Repetitive peak off-state voltage (see Note 1) TIC226DTIC226MTIC226STIC226N 400600700800 V Full-cycle RMS on-state cur...

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SeekIC No. : 004519107 Detail

TIC226M: Features: 8 A RMS, 70 A PeakGlass Passivated Wafer400 V to 800 V Off-State VoltageMax I of 50 mA (Quadrants 1 - 3) GTPinoutSpecifications RATING SYMBOL VALUE UNIT Repetitive peak off-stat...

TIC226M Data Sheet

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Part Number:
TIC226M
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 8 A RMS, 70 A Peak 
 Glass Passivated Wafer 
 400 V to 800 V Off-State Voltage 
 Max I  of 50 mA (Quadrants 1 - 3) GT


Pinout

Connection Diagram


Specifications

RATING SYMBOL VALUE UNIT
Repetitive peak off-state voltage (see Note 1)
 TIC226D
TIC226M
TIC226S
TIC226N		 400
600
700
800		 V
Full-cycle RMS on-state current at (or below) 70case temperature (see Note 2 ) T(RMS) 8 A
Peak on-state surge current full-sine-wave (see Note 3) ITSM
 70 A
Peak on-state surge current half-sine-wave (see Note 4) ITSM
 80 A
Peak gate current IGM ±1 A
Peak gate power dissipation at (or below) 85case temperature (pulse width s 200 ms)
 PGM 22 W
Average gate power dissipation at (or below) 85!aC case temperature (see Note 5) PG(AV) 0.9 W
Operating case temperature range TC -40 to +110
Storage temperature range Tstg -40 to +125
Lead temperature 1.6 mm from case for 10 seconds TL 230



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