TIC216A

The TIC216A is designed as one kind of silicon bidirectional triode thyristor that has some points of features: (1)6 A RMS; (2)glass passivated wafer; (3)100 V to 800 V off-state voltage; (4)max IGT of 5 mA (Quadrants 1-3); (5)sensitive gate triacs; (6)compliance to ROHS. And this device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.

The absolute maximum ratings of the TIC216A can be summarized as:(1)Repetitive peak off-state voltage: 100 V;(2)Full-cycle RMS on-state current at (or below) 70°C case temperature: 6 A;(3)Peak on-state surge current full-sine-wave: 60 A;(4)Peak on-state surge current half-sine-wave: 70 A;(5)Peak gate current: +/- 1 A;(6)Peak gate power dissipation at (or below) 85°C case temperature (pulse width 200 s): 2.2 W;(7)Average gate power dissipation at (or below) 85°C case: 0.9 W;(8)Operating case temperature range: -40 to +110 °C;(9)Storage temperature range: -40 to +125 °C;(10)Lead temperature 1.6 mm from case for 10 seconds: 230 °C. If you want to know more information about the TIC216A, please download the datasheet in www.seekic.com or www.chinaicmart.com .