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TIC206N

Features: Sensitive Gate Triacs4 A RMSGlass Passivated Wafer400 V to 800 V Off-State VoltageMax IGT of 5 mA (Quadrants 1 - 3)PinoutSpecifications RATING SYMBOL VALUE UNIT Repetitive peak off-state voltage (see Note 1) TIC201DTIC201MTIC201STIC201N VDRM 400600700800 V Full-cycle R...

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TIC206N: Features: Sensitive Gate Triacs4 A RMSGlass Passivated Wafer400 V to 800 V Off-State VoltageMax IGT of 5 mA (Quadrants 1 - 3)PinoutSpecifications RATING SYMBOL VALUE UNIT Repetitive peak...

TIC206N Data Sheet

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Part Number:
TIC206N
Supply Ability:
5000

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  • 1~5000
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  • Processing time
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Product Details

Description



Features:

 Sensitive Gate Triacs
 4 A RMS
 Glass Passivated Wafer
 400 V to 800 V Off-State Voltage
 Max IGT of 5 mA (Quadrants 1 - 3)




Pinout

Connection Diagram


Specifications

RATING SYMBOL VALUE UNIT
Repetitive peak off-state voltage (see Note 1) TIC201D
TIC201M
TIC201S
TIC201N		 VDRM








 400
600
700
800		 V
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2) IT(RMS) 4 A
Peak on-state surge current full-sine-wave (see Note 3) ITSM 25 A
Peak on-state surge current half-sine-wave (see Note 4) ITSM 30 A
Peak gate current IGM ±0.2 A
Peak gate power dissipation at (or below) 85°C case temperature (pulse width £ 200 s) PGM 1.3 W
Average gate power dissipation at (or below) 85°C case temperature (see Note 5) PG(AV) 0.3 W
Operating case temperature range TC -40 to +110 °C
Storage temperature range Tstg -40 to +125 °C
Lead temperature 1.6 mm from case for 10 seconds TL 230 °C



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