TH562

Specifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 55 V VEBO Emitter-Base Voltage 4.0 V IC Device Current 20 A PDISS Power Dissipation (Theatsink25°C) 233 W TJ Junction Temperature +200 °C TSTG ...

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SeekIC No. : 004518544 Detail

TH562: Specifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 55 V VEBO Emitter-Base Voltage 4.0 V IC Device Current 20 ...

floor Price/Ceiling Price

Part Number:
TH562
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/12

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Product Details

Description



Specifications

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 110 V
VCEO Collector-Emitter Voltage 55 V
VEBO Emitter-Base Voltage 4.0 V
IC Device Current 20 A
PDISS Power Dissipation (Theatsink25°C) 233 W
TJ Junction Temperature +200 °C
TSTG Storage Temperature - 65 to +150 °C



Description

The SD1731 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications.This device utilizes emitter ballasting for improved ruggedness and reliability




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