TH560

Specifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 4.0 V IC Device Current 16 A PDISS Power Dissipation 320 W TJ Junction Temperature +200 °C TSTG Storage Tempera...

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SeekIC No. : 004518543 Detail

TH560: Specifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 4.0 V IC Device Current 16 A...

floor Price/Ceiling Price

Part Number:
TH560
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/12

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Product Details

Description



Specifications

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 70 V
VCEO Collector-Emitter Voltage 35 V
VEBO Emitter-Base Voltage 4.0 V
IC Device Current 16 A
PDISS Power Dissipation 320 W
TJ Junction Temperature +200 °C
TSTG Storage Temperature - 65 to +150 °C



Description

The SD1730 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. The devices utlizes emitter ballasting for improved ruggedness and reliability.




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