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TGA8658-EPU-SG

Features: • Frequency Range: 13-17 GHz• Optimized for VSAT band (13.75-14.5GHz)• 33 dB Nominal Gain• Typical > 33.5 dBm Psat in VSAT band @ 7V• Bias 5-8 V @ 680 mA (Quiescent)• 0.5 mm 3MI pHEMT Technology• Integrated power detector• 6 lead package...

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SeekIC No. : 004518398 Detail

TGA8658-EPU-SG: Features: • Frequency Range: 13-17 GHz• Optimized for VSAT band (13.75-14.5GHz)• 33 dB Nominal Gain• Typical > 33.5 dBm Psat in VSAT band @ 7V• Bias 5-8 V @ 680 mA (...

TGA8658-EPU-SG Data Sheet

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Part Number:
TGA8658-EPU-SG
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Frequency Range: 13-17 GHz
• Optimized for VSAT band (13.75-14.5GHz)
• 33 dB Nominal Gain
• Typical > 33.5 dBm Psat in VSAT band @ 7V
• Bias 5-8 V @ 680 mA (Quiescent)
• 0.5 mm 3MI pHEMT Technology
• Integrated power detector
• 6 lead package
• Package Dimensions: 6.4 x 6.4 x 3.0 mm (0.3 x 0.3 x 0.1 in )


Specifications

Symbol Parameter Value Notes
Vd Drain Supply Voltage 8 V 2/
Vg Gate Supply Voltage Range -5V to 0V  
Idq Drain Supply Current (Quiescent) 1.3 A 2/
| Ig | Gate Current 18 mA  
PIN Input Continuous Wave Power 21 dBm 2/
PD Power Dissipation 5 W + (85°C- TB)/13 2/ 3/
TCH Operating Channel Temperature 150 °C 4/ 5/
TM Mounting Temperature
(30 Seconds)		 320 °C  
TSTG Storage Temperature -65 to 150 °C  

1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ TB = Package backside temperature in degrees C.
4/ These ratings apply to each individual FET.
5/ Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.




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