Features: • DC - 12 GHz Linear BW• DC - 16 GHz Saturated Power BW• 16 dB small signal gain• Wide Drive Range (4V to 8V)• 25 ps Edge Rates (10/90)• Low Power Dissipation (1.4W at Vo=8V)• Package size: .350 x .350 x .084 inches.• Evaluation Board Avail...
TGA8652-EPU-SL: Features: • DC - 12 GHz Linear BW• DC - 16 GHz Saturated Power BW• 16 dB small signal gain• Wide Drive Range (4V to 8V)• 25 ps Edge Rates (10/90)• Low Power Dissi...
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DescriptionThe TGA8031-SCC is a kind of GaAs monolithic medium-power amplifier that operates from ...
SYMBOL | PARAMETER 1/ | VALUE | NOTES |
V+ Vd(RFout) |
POSITIVE SUPPLY VOLTAGE Drain bias applied thru on-chip termination Drain bias applied at RF output using bias T |
12 V 10 V |
|
V+ Id |
POSITIVE SUPPLY CURRENT Drain bias applied thru on-chip termination Drain bias applied at RF output using bias T |
110 mA 250 mA |
2/ |
Pd | POWER DISSIPATION | 2.4 W | 3/ |
Vg Ig |
NEGATIVE GATE Voltage Gate Current |
0 V to 3 V 5 mA |
|
Vctrl Ictrl |
CONTROL GATE Voltage Gate Current |
Vd/2 to 3 V 5 mA |
4/ |
PIN | RF INPUT Sinusoidal Continuous Wave Power |
23 dBm | |
TCH | OPERATING CHANNEL TEMPERATURE | 150 | 5/ 6/ |
TSTG | STORAGE TEMPERATURE | -40 to 125 |
Notes:
1/ These ratings represent the maximum operable values for the device.
2/ Assure the combination of Vd and Id does not exceed maximum power dissipation rating.
3/ When operated at this bias condition with a base plate temperature of 80 0C, the Mean Time to Failure (MTTF) is reduced from 2.6E+7 to 1E+6 hours.
4/ Assure Vctrl never exceeds Vd during bias on and off sequences, and normal operation.
5/ These ratings apply to each individual FET.
6/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
The TriQuint TGA8652-EPU is a medium power wideband AGC amplifier combined with off chip circuitry assembled in a Surface Mount Package. The TGA8652-EPU typically provides 16dB small signal gain with 6dB AGC range.
Typical input and output return loss is <10dB. Typical Noise Figure is 2.5dB at 3GHz. Typical saturated output power is 25dBm. Small signal 3dB BW is 12GHz with saturated power performance to 16GHz. RF ports are DC coupled enabling the user to customize system corner frequencies.
Applications include OC192 12.5GBit/s NRZ MZ Modulator Driver and receive AGC amplifier.
Drain bias may be applied thru the on-chip drain termination resistor for low drive applications or thru the RF output port for high drive applications. A cascaded pair demonstrated 8Vpp output voltage swing with 500mVpp at the input when stimulated with 10GBit/s. 2^31-1prbs. NRZ data.
The TGA8652-EPU is available on an evaluation board.