TGA8344-SCC

Stresses beyond those listed under "Maximum Ratings" may cause permanent damage to the device.

These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "RF Specifications" is not implied. Exposure to maximum rated conditions for extended periods may affect device reliability.

*For operation above 25 base-plate temperature, derate linearly at the rate of 11.2mW/.
** Operating channel temperature, TCH, directly affects the device MTTF. For maximum life, it is recommended that channel temperature be maintained at the lowest possible level.

The TriQuint TGA8344-SCC features two cascaded monolithic low-noise distributed amplifiers with on-chip bias operating from 2 to 18 GHz. This die offers the advantage of high gain, typically 19 dB, in compact die size with simplified biasing configuration. Noise figure is typically 4 dB. The two cascade amplifiers have eighteen 122 um gatewidth FETs providing 16 dBm of output power at 1 dB gain compression. Input return loss is typically 14 dB from 2 to 18 GHz and output return loss is typically 13 dB. Ground is provided to the circuitry through vias to the backside metallization. The TGA8344-SCC small size and high gain make it suitable for use in a variety of wide-band electronic commercial and warfare systems.

Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment methods as well as the thermocompression wire-bonding processes. The TGA8344-SCC is supplied in chip form and is readily assembled using automated equipment.