TGA8286-EPU

• 8 to 10.5 GHz Frequency Range, X-band
• Two Stage 5-W HFET Power Amplifier
• 37% P.A.E. at 2 to 3 dB Gain Compression
• 17 dB Small Signal Gain
• Bias can be applied from either the upper or lower edges
• 5.384 x 2.997 x 0.1016 mm (0.212 x 0.118 x 0.004 in.)

Positive supply voltage, V+...............................    .  . ..12 V
Positive supply voltage range w ith respect to negative supply voltage, V+ - V-....0 V to 13 V
Negative supply voltage range, V-...........................  -5 V to 0 V
Drain supply voltage, V_D...........................................11 V
Drain supply current, I_D......................................3.6 mA
Positive supply current, I+.....................................902 mA
Pow er dissipation, P_D, at (or below) 25oC base-plate temperature *.......... 28.8 W
Input continuous w ave pow er, P_IN............................30 dBm
Operating Channel temperature, T_CH **.........................  150oC
Mounting temperature (30 sec.), T_M............................ 320oC
Storage temperature range, T_STG..........................-65 to 150oC

The TriQuint TGA8286-EPU is a GaAs monolithic amplifier designed for use as an X-band power amplifier. A 2.4mm and a 9.6mm HFET provide 16 dB nominal gain from 8 to 10.5 GHz with a typical 37% power-added efficiency at 2 to 3 dB gain compression. Ground is provided to the circuitry through vias to the backside metallization. The TGA8286-EPU effectively addresses applications such as an Xband radar transmitter or a microwave communication transmitter.

The TGA8286-EPU is supplied in chip form and is engineered for high volume automated assembly. All metal surfaces are gold plated to be compatiable with thermocompression and thermosonic wire bonding processes.