Photodetector Transistors NPN Phototransistor
TEMT1020: Photodetector Transistors NPN Phototransistor
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Maximum Power Dissipation : | 100 mW | Maximum Dark Current : | 200 nA |
Package / Case : | SMT-2 |
Parameter | Test Conditions | Symbol | Value | Unit |
Emitter Collector Voltage Collector current Collector peak current Total Power Dissipation Junction Temperature Storage Temperature Range Operating Temperature Range Soldering Temperature Thermal Resistance Junction/ Ambient |
tp/T 0.5, tp 10s Tamb 55 °C t 5 s |
VECO IC ICM Ptot Tj Tstg Tamb Tsd RthJA |
5 50 100 100 100 - 40 to + 100 - 40 to + 85 < 260 400 |
V V mA mA mW °C °C °C K/W |
TEMT1020 series are high speed and high sensitive silicon NPN epitaxial planar phototransistors in SMD package with dome lens. Due to integrated Daylight filter devices are sensitive for IR radiation only.