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TEMT1000

Photodetector Transistors 5V 100mW 880nm

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SeekIC No. : 0081989 Detail

TEMT1000: Photodetector Transistors 5V 100mW 880nm

TEMT1000 Data Sheet

floor Price/Ceiling Price

US $ .21~.28 / Piece | Get Latest Price
Part Number:
TEMT1000
Mfg:
Vishay Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.28
  • $.25
  • $.24
  • $.21
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2025/1/12

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Product Details

Quick Details

Maximum Power Dissipation : 100 mW Maximum Dark Current : 200 nA
Package / Case : SMT-2    

Description

Maximum Power Dissipation : 100 mW
Maximum Dark Current : 200 nA
Package / Case : SMT-2


Features:

`Fast response times
`High photo sensitivity
`Angle of half sensitivity j = ± 15`
`Daylight filter matched for near IR radiation
`SMD with terminals Zbend




Application

·Detector in electronic control and drive circuits
·IR Detector for Daylight application




Specifications

Parameter Test Conditions Symbol Value Unit
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Soldering Temperature


tp/T = 0.5, tp 10 ms
Tamb 55 °C



t 3 s, 2 mm from case
VCEO
VECO
IC
ICM
Ptot
Tj
Tstg
Tamb
Tsd
70
5
50
100
100
100
40...+85
40...+85
260
V
V
mA
mA
mW
°C
°C
°C
°C





Description

Silicon NPN Phototransistor, RoHS Compliant

TEMT1000 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in SMT package with dome lens. Due to its integrated Daylight filter the device is sensitive for IR radiation only. High on axis sensitivity is provided by a viewing angle of ± 15






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