DescriptionThe TD62C853F is a monolithic circuit designed to be used together with Bi-CNOS integrated circuits. The device consists of a 8bit shift register, 8bit latches, and 8 output circuits. The feature of TD62C853F are as follows: (1)8bit serial-in parallel-out shift register/latch driver; (2...
TD62C853F: DescriptionThe TD62C853F is a monolithic circuit designed to be used together with Bi-CNOS integrated circuits. The device consists of a 8bit shift register, 8bit latches, and 8 output circuits. The...
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The TD62C853F is a monolithic circuit designed to be used together with Bi-CNOS integrated circuits. The device consists of a 8bit shift register, 8bit latches, and 8 output circuits. The feature of TD62C853F are as follows: (1)8bit serial-in parallel-out shift register/latch driver; (2)maximum output sustaining voltage: 50V; (3)maximum output current: 200mA/ch; (4)CMOS compatible inputs; (6)package: SSOP24-P-300-1.00.
The absolute maximum ratings of the TD62C853F are: (1)supply voltage: -0.3~7.0V; (2)output sustaining voltage: -0.5~50V; (3)output current: 500mA/ch; (4))input voltage: - 0.4~VDD ± 0.3 V; (5)power dissipation: 780mW; (6)operating temperature: -40~85°C; (7)storage temperature: - 55~150°C.
The following is about the electrical characteristics of TD62C853F: (1)input voltage(high level): 0.7VDD min; (2)input voltage(low level): 0.3VDD max; (3)input current(high level): 28A min, 55A typical and 110A max at enable, VDD = 5.5V, VIH = VDD; (4)input current(low level): -55A min, -110A typical and -275A max at latch, reset, VDD = 5.5V, VIL = GND; (5)output voltage(low level): 0.2V typical and 0.4V max at VDD = 4.5V, IOL = 0.8mA; (6)output current: 100A at VDD = 5.5V, VOH = 0.8mA; (7)clamp diode reverse current: 50A max at VR = 50V; (8)operating supply current: 130mA typical and 200mA max at enable = "H".