TCDT1122G

Isolation Voltage : 5000 Vrms
Minimum Operating Temperature : - 55 C
Packaging : Tube
Maximum Operating Temperature : + 100 C
Maximum Collector Emitter Saturation Voltage : 0.3 V
Maximum Forward Diode Voltage : 1.6 V
Maximum Collector Current : 50 mA
Maximum Power Dissipation : 250 mW
Input Type : DC
Package / Case : PDIP-6
Current Transfer Ratio : 125 %
Maximum Collector Emitter Voltage : 90 V


Features:

Approvals:
·BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402
·FIMKO (SETI): EN 60950, Certificate number 12399
·Underwriters Laboratory (UL) 1577 recognized, file number E-76222
·VDE 0884, Certificate number 94778 VDE 0884 related features:
·Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak
·Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV
·Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak)
·Rated recurring peak voltage (repetitive) VIORM = 600 VRMS
·Creepage current resistance according to VDE 0303/IEC 112
Comparative Tracking Index: CTI = 275
·Thickness through insulation . 0.75 mm
General features:
·Isolation materials according to UL94-VO
·Pollution degree 2 (DIN/VDE 0110 resp. IEC 664)
·Climatic classification 55/100/21 (IEC 68 part 1)
·Special construction:
Therefore, extra low coupling capacity of typical 0.3 pF, high Common Mode Rejection
·Low temperature coefficient of CTR
·Base not connected
·CTR offered in 4 groups
·Coupling System A




Application

Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):

`For appl. class I IV at mains voltage 3 300 V
`For appl. class I III at mains voltage 3 600 V

according to VDE 0884, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface.




Pinout






Specifications

Parameter	TestConditions	Symbol	Value	Unit
Reverse voltage Forward current Forward surge current Power dissipation Junction temperature	tp 10 s Tamb 25	VR IF IFSM PV Tj	5 60 3 100 125	V mA A mW

Description

The TCDT1120(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.

The elements of TCDT1120(G)  are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.