TCDT1100

Current Transfer Ratio :
Isolation Voltage : 5000 Vrms
Minimum Operating Temperature : - 55 C
Packaging : Tube
Maximum Operating Temperature : + 100 C
Maximum Collector Emitter Voltage : 32 V
Maximum Collector Emitter Saturation Voltage : 0.3 V
Maximum Forward Diode Voltage : 1.6 V
Maximum Collector Current : 50 mA
Maximum Power Dissipation : 250 mW
Input Type : DC
Package / Case : PDIP-6


Features:

Approvals:
· BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402
· FIMKO (SETI): EN 60950, Certificate number 12399
· Underwriters Laboratory (UL) 1577 recognized, file number E-76222
· VDE 0884, Certificate number 94778 VDE 0884 related features:
· Rated impulse voltage (transient overvoltage) V_IOTM = 6 kV peak
· Isolation test voltage (partial discharge test voltage) V_pd = 1.6 kV
· Rated isolation voltage (RMS includes DC) V_IOWM = 600 VRMS (848 V peak)
· Rated recurring peak voltage (repetitive) V_IORM = 600 VRMS
· Creepage current resistance according to V_DE 0303/IEC 112 Comparative Tracking Index: CTI = 275
· Thickness through insulation . 0.75 mm
General features:
· Isolation materials according to UL94-VO
· Pollution degree 2 (DIN/VDE 0110/ resp. IEC 664)
· Climatic classification 55/100/21 (IEC 68 part 1)
· Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection
· Low temperature coefficient of CTR
· CTR offered in 4 groups
· Base not connected
· Coupling System A




Application

Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
`For appl. class I IV at mains voltage 300 V
`For appl. class I III at mains voltage 600 V





Pinout






Specifications

Parameter	TestConditions	Symbol	Value	Unit
Reverse voltage Forward current Forward surge current Power dissipation Junction temperature	tp 3 10 s Tamb 3 25	VR IF IFSM PV Tj	5 60 3 100 125	V mA A mW

Description

The TCDT1100(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.

The elements of TCDT1100(G) are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.