TCDT1101G

Isolation Voltage : 5000 Vrms
Minimum Operating Temperature : - 55 C
Packaging : Tube
Maximum Operating Temperature : + 100 C
Maximum Collector Emitter Voltage : 32 V
Maximum Collector Emitter Saturation Voltage : 0.3 V
Maximum Forward Diode Voltage : 1.6 V
Maximum Collector Current : 50 mA
Maximum Power Dissipation : 250 mW
Input Type : DC
Package / Case : PDIP-6
Current Transfer Ratio : 80 %


Description

The TCDT1101G is designed as a optocoupler with phototransistor output which consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.

TCDT1101G has eight features. (1)Isolation materials according to UL94-VO. (2)Pollution degree 2 (DIN/VDE 0110/resp. IEC 664). (3)Climatic classification 55/100/21 (IEC 68 part 1). (4)Special construction: therefore, extra low coupling capacity of typical 0.2pF, high common mode rejection. (5)Low temperature coefficient of CTR. (6)CTR offered in 4 groups. (7)Base not connected. (8)Coupling system A. Those are all the main features.

Some absolute maximum ratings of TCDT1101G have been concluded into several points as follow. (1)Its reverse voltage would be 5V. (2)Its orward current would be 60mA. (3)Its forward surge current would be 3A. (4)Its collector emitter voltage would be 32V. (5)Its emitter collector voltage would be 7V. (6)Its collector current would be 50mA. (7)Its collector peak current would be 100mA. (8)Its AC isolation test voltage (RMS) would be 3.75kV. (9)Its total power dissipation would be 250mW. (10)Its ambient temperature range would be from -55°C to 100°C. (11)Its storage temperature range would be from -55°C to 125°C. (12)Its soldering temperature would be 260°C. TCDT1101G should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of TCDT1101G are concluded as follow. (1)Its forward voltage would be typ 1.25V and max 1.6V. (2)Its emitter junction capacitance would be typ 50pF. (3)Its collector emitter voltage would be min 32V. (4)Its emitter collector voltage would be min 7V. (5)Its collector emiter cutoff current would be typ 200nA. (6)Its collector emitter saturation voltage would be max 0.3V. (7)Its cutoff frequency would be typ 110kHz. (8)Its current transfer ratio would be min 0.4 and max 0.8. And so on. If you have any question or suggestion or want to know more information of TCDT1101G please contact us for details. Thank you!