Transistor Output Optocouplers Phototransistor Out Single CTR > 100%
TCDT1110G: Transistor Output Optocouplers Phototransistor Out Single CTR > 100%
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Input Type : | DC | Maximum Collector Emitter Voltage : | 70 V |
Maximum Collector Emitter Saturation Voltage : | 0.3 V | Isolation Voltage : | 5300 Vrms |
Maximum Forward Diode Voltage : | 1.5 V | Maximum Collector Current : | 50 mA |
Maximum Power Dissipation : | 250 mW | Maximum Operating Temperature : | + 100 C |
Minimum Operating Temperature : | - 55 C | Package / Case : | PDIP-6 |
Packaging : | Tube |
PARAMETER | TEST CONDITION |
SYMBOL |
VALUE |
UNIT |
INPUT | ||||
Reverse voltage |
VR |
6 |
V | |
Forward current |
IF |
60 |
mA | |
Forward surge current | tp/T 10 s |
IFSM |
3 |
mW |
Power dissipation |
Pdiss |
100 |
||
Junction temperature |
Tj |
125 |
The TCDT1110/TCDT1110G consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6 pin plastic dual inline package.
The elements of TCDT1110/TCDT1110G provide a fixed distance between input and output for highest safety requirements.