TCDT1110

Current Transfer Ratio :
Minimum Operating Temperature : - 55 C
Maximum Forward Diode Voltage : 1.5 V
Packaging : Tube
Maximum Operating Temperature : + 100 C
Maximum Collector Emitter Saturation Voltage : 0.3 V
Maximum Collector Current : 50 mA
Maximum Power Dissipation : 250 mW
Input Type : DC
Isolation Voltage : 5300 Vrms
Package / Case : PDIP-6
Maximum Collector Emitter Voltage : 70 V


Features:

Approvals:
·BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402
·FIMKO (SETI): EN 60950,
Certificate number 12399
·Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
·VDE 0884, Certificate number 94778
VDE 0884 related features:
·Rated impulse voltage (transient overvoltage)
VIOTM = 6 kV peak
·Isolation test voltage (partial discharge test
voltage) Vpd = 1.6 kV
·Rated isolation voltage (RMS includes DC)
VIOWM = 600 VRMS (848 V peak)
·Rated recurring peak voltage (repetitive)
VIORM = 600 VRMS
·Creepage current resistance according to
VDE 0303/IEC 112
Comparative Tracking Index: CTI = 275
·Thickness through insulation . 0.75 mm
General features:
·Isolation materials according to UL94-VO
·Pollution degree 2 (DIN/VDE 0110 resp. IEC
·Climatic classification 55/100/21 (IEC 68
·Special construction:
Therefore, extra low coupling capacity of
typical 0.3 pF, high Common Mode Rejection
·Low temperature coefficient of CTR
·Base not connected
·Coupling System A




Application

Circuits for safe protective separation against electrical shock according to safety class II
(reinforced isolation):
` For appl. class I IV at mains voltage 3 300 V
` For appl. class I III at mains voltage 3 600 V
according to VDE 0884, table 2, suitable for:
Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface.




Pinout






Specifications

Parameter	TestConditions	Symbol	Value	Unit
Reverse voltage Forward current Forward surge current Power dissipation Junction temperature	tp 3 10 s Tamb 3 25	VR IF IFSM PV Tj	6 60 3 100 125	V mA A mW

Description

The TCDT1110(G) consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package. The elements of TCDT1110(G)  are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.