TC4426A

Features: High Peak Output Current...............................1.5AWide Operating Range..........................4.5V to 18VHigh Capacitive Load Drive Capability.................1000 pF in 25 nsec TypShort Delay Time.................................30 nsec TypMatched Rise, Fall and Delay TimesLo...

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TC4426A Picture
SeekIC No. : 004513737 Detail

TC4426A: Features: High Peak Output Current...............................1.5AWide Operating Range..........................4.5V to 18VHigh Capacitive Load Drive Capability.................1000 pF in 25 nsec...

floor Price/Ceiling Price

Part Number:
TC4426A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/12

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Product Details

Description



Features:

High Peak Output Current...............................1.5A
Wide Operating Range..........................4.5V to 18V
High Capacitive Load Drive Capability.................1000 pF in 25 nsec Typ
Short Delay Time.................................30 nsec Typ
Matched Rise, Fall and Delay Times
Low Supply Current
- With Logic "1" Input............................1 mA Typ
- With Logic "0" Input.........................100 µA Typ
Low Output Impedance................................7Ω Typ
Latch-Up Protected: Will Withstand 0.5A Reverse Current
Input Will Withstand Negative Inputs Up to 5V
ESD Protected....................................................4 kV
Pinout Same as TC426/TC427/TC428





Pinout

  Connection Diagram




Specifications

Supply Voltage....................................................+22V
Input Voltage, IN A or IN B..(VDD + 0.3V) to (GND 5.0V)
Maximum Chip Temperature...........................+150°C
Storage Temperature Range........ 65°C to +150°C
Lead Temperature (Soldering, 10 sec)............+300°C
Package Thermal Resistance
CerDIP RJ-A................................................150°C/W
CerDIP RJ-C..................................................50°C/W
PDIP RJ-A...................................................125°C/W
PDIP RJ-C.....................................................42°C/W
SOIC RJ-A...................................................155°C/W
SOIC RJ-C.....................................................45°C/W
Operating Temperature Range
C Version............................................0°C to +70°C
E Version...................................... 40°C to +85°C
M Version.................................... 55°C to +125°C
Package Power Dissipation (TA70°C)
Plastic.............................................................730mW
CerDIP............................................................800mW
SOIC...............................................................470mW



Parameter Name Value
Power Dual
Peak Output Current (mA) 1500
Output Resistance (RH/RL)(Max. @ 25°C) 9/9
Max. Supply Voltage (V) 18
Input/Output Delay (td1, td2)1 (ns) 35/35
Configuration Inverting
Description Low-Side MOSFET Drivers, 1.5A Peak Output Current
Operating Temp. Range (°C) -40 to 125


Parameter NameValuePowerDual Peak Output Current (mA)1500Output Resistance (RH/RL)(Max. @ 25°C)9/9Max. Supply Voltage (V)18Input/Output Delay (td1, td2)1 (ns)35/35ConfigurationInverting DescriptionLow-Side MOSFET Drivers, 1.5A Peak Output CurrentOperating Temp. Range (°C)-40 to 125




Description

The TC4426A/4427A/4428A are improved versions of the earlier TC426/427/428 family of buffer/drivers (with which they are pin compatible). They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking (of either polarity) occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of reverse current (of either polarity) being forced back into their
outputs. All terminals of TC4426A are fully protected against up to 4 kV of electrostatic discharge.

As MOSFET drivers, the TC4426A/4427A/4428A can easily switch 1000 pF gate capacitances in under 30 ns, and provide low enough impedances in both the ON and OFF states to ensure the MOSFET's intended state will not be affected, even by large transients.






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