TC4421

Features:

` Tough CMOS™ Construction
` High Peak Output Current .................................. 9A
` High Continuous Output Current ............... 2A Max
` Fast Rise and Fall Times:
- 30 nsec with 4,700 pF Load
- 180 nsec with 47,000 pF Load
` Short Internal Delays ............................ 30nsec Typ
`Low Output Impedance ............................ 1.4W Typ




Application

· Line Drivers for Extra-Heavily-Loaded Lines
· Pulse Generators
· Driving the Largest MOSFETs and IGBTs
· Local Power ON/OFF Switch
· Motor and Solenoid Driver




Pinout






Specifications

Parameter NameValuePowerSingle Peak Output Current (mA)9000Output Resistance (RH/RL)(Max. @ 25°C)2.4/1.7Max. Supply Voltage (V)18Input/Output Delay (td1, td2)1 (ns)60/60ConfigurationInverting DescriptionLow-Side MOSFET Drivers, 2.0A to 9.0A Peak Output CurrentOperating Temp. Range (°C)-40 to 85

Parameter Name	Value
Power	Single
Peak Output Current (mA)	9000
Output Resistance (RH/RL)(Max. @ 25°C)	2.4/1.7
Max. Supply Voltage (V)	18
Input/Output Delay (td1, td2)1 (ns)	60/60
Configuration	Inverting
Description	Low-Side MOSFET Drivers, 2.0A to 9.0A Peak Output Current
Operating Temp. Range (°C)	-40 to 85

Power Dissipation, T_A 70
PDIP ...............................................................730W
CerDIP .........................................................800mW
5-Pin TO-220 ...................................................1.6W
Power Dissipation, T_A 70
5-Pin TO-220 (With Heat Sink) ......................1.60W
Derating Factors (To Ambient)
PDIP ............................................................ 8mW/
CerDIP ...................................................... 6.4mW/
5-Pin TO-220 .............................................. 12mW/
Thermal Impedance (To Case)
5-Pin TO-220 R_QJ-C ...................................... 10/W
Storage Temperature ........................ 65to +150
Operating Temperature (Chip) ............................ 150
Operating Temperature (Ambient)
C Version ............................................. 0 to +70
E Version ....................................... 40 to +85
M Version ..................................... 55 to +125
Lead Temperature (10 sec).................................. 300
Supply Voltage ........................................................20V
Input Voltage ..................... (V_DD + 0.3V) to (GND - 5V)
Input Current (V_IN > V_DD) ...................................50 mA

*Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Description

The TC4421/4422 are high current buffer/drivers capable of driving large MOSFETs and IGBTs. They are essentially immune to any form of upset except direct overvoltage or over-dissipation - they cannot be latched under any conditions within their power and voltage ratings; they are not subject to damage or improper operation when up to 5V of ground bounce is present on their ground terminals; they can accept, without either damage or logic upset, more than 1A inductive current of either polarity being forced back into their outputs. In addition, all terminals are fully protected against up to 4kV of electrostatic discharge. The TC4421/4422 inputs may be driven directly from either TTL or CMOS (3V to 18V). In addition, 300mV of hysteresis is built into the input, providing noise immunity and allowing the device to be driven from slowly rising or falling waveforms.

The TC4421/4422 are high current buffer/drivers capable of driving large MOSFETs and IGBTs.

They are essentially immune to any form of upset except direct overvoltage or over-dissipation - they cannot be latched under any conditions within their power and voltage ratings; they are not subject to damage or improper
operation when up to 5V of ground bounce is present on their ground terminals; they can accept, without either
damage or logic upset, more than 1A inductive current of either polarity being forced back into their outputs. In addition, all terminals are fully protected against up to 4 kV of electrostatic discharge.

The TC4421/4422 inputs may be driven directly from either TTL or CMOS (3V to 18V). In addition, 300 mV of hysteresis is built into the input, providing noise immunity and allowing the device to be driven from slowly rising or falling waveforms.