TC4069UBFT

DC supply voltage V_DD ...............V_SS − 0.5 to V_SS + 20 V
Input voltage V_IN .....................V_SS − 0.5 to V_DD + 0.5 V
Output voltage V_OUT ...............V_SS − 0.5 to V_DD + 0.5 V
DC input current I_IN.......................................... ±10 mA
Power dissipation P_D............ 300 (DIP)/180 (SOIC) mW
Operating temperature range Topr........... −40 to 85
Storage temperature range Tstg............. −65 to 150
Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction.Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

TC4069UBFT contains six circuits of inverters. Since the internal circuit is composed of a single stage inverter, this TC4069UBFT is suitable for the applications of CR oscillator circuits, crystal oscillator circuits and linear amplifiers in addition to its application as inverters. Because of one stage gate configuration, the propagation time has been reduced.