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TC3889

Features: • 5W Typical Output Power• 12dB Typical Linear Power Gain at 2.0GHz• High Linearity: IP3 = 47 dBm Typical• High Power Added Efficiency: Nominal PAE of 35%• Breakdown Voltage: BVDGO 18V• Wg = 12 mm• 100 % DC Tested• Suitable for High Reliab...

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SeekIC No. : 004513592 Detail

TC3889: Features: • 5W Typical Output Power• 12dB Typical Linear Power Gain at 2.0GHz• High Linearity: IP3 = 47 dBm Typical• High Power Added Efficiency: Nominal PAE of 35%• Br...

TC3889 Data Sheet

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Part Number:
TC3889
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 5W Typical Output Power
• 12dB Typical Linear Power Gain at 2.0GHz
• High Linearity: IP3 = 47 dBm Typical
• High Power Added Efficiency: Nominal PAE of 35%
• Breakdown Voltage: BVDGO 18V
• Wg = 12 mm
• 100 % DC Tested
• Suitable for High Reliability Application


Description

The TC3889 is a self-bias flange ceramic packaged device with TC1806N PHEMT GaAs FETs, which is designed to provide the single power supply application. The flange ceramic package provides excellent thermal conductivity for the GaAs FET. The devices only need to provide the positive voltage to drain and ground the source, which is suitable for oscillator, power amplifier application in a wide range of commercial application. All devices are 100% DC tested to assure consistent quality.




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