Features: ` 7W Typical Output Power` 10.5dB Typical Linear Power Gain at 2.45 GHz` High Linearity: IP3 = 48.5 dBm Typical` High Power Added Efficiency: Nominal PAE of 35%` Breakdown Voltage: BVDGO 18V` 100 % DC Tested` Suitable for High Reliability ApplicationDescriptionThe TC3879 is a self-bias ...
TC3879: Features: ` 7W Typical Output Power` 10.5dB Typical Linear Power Gain at 2.45 GHz` High Linearity: IP3 = 48.5 dBm Typical` High Power Added Efficiency: Nominal PAE of 35%` Breakdown Voltage: BVDGO ...
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The TC3879 is a self-bias flange ceramic packaged device with PHEMT GaAs FETs, which is designed to provide the single power supply. The flange ceramic package provides excellent thermal conductivity for the GaAs FET. The device is suitable for oscillators and power amplifiers in a wide range of commercial application. All devices are 100% DC tested to assure consistent quality.