Features: ·P-1 dB: 33 dBm·Small Signal Gain: 29 dB·Power Added Efficiency: 31 %·IP3: 42 dBm·DC Bias: 800 mA @ 7 VSpecifications Symbol Parameter/Conditions Min. Max. Units Vdd Drain-Source Voltage 12 Volts Idd Total Drain Current 2000 mA Pin ...
TC3141: Features: ·P-1 dB: 33 dBm·Small Signal Gain: 29 dB·Power Added Efficiency: 31 %·IP3: 42 dBm·DC Bias: 800 mA @ 7 VSpecifications Symbol Parameter/Conditions Min. Max. Units Vd...
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Symbol |
Parameter/Conditions |
Min. |
Max. |
Units |
Vdd |
Drain-Source Voltage |
12 |
Volts | |
Idd |
Total Drain Current |
2000 |
mA | |
Pin |
RF Input Power |
10 |
dBm | |
Pt |
Power Dissipation |
12 |
W | |
Tch |
Operating Channel Temperature |
175 |
||
TSTG |
Storage Temperature |
-65 |
175 |
Note:
1. This GaAs MMIC is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices.
2. Specifications subject to change without notice.
The TC3141 is a 2 stage PHEMT MMIC power amplifier. It is designed for use in low cost and high volume 2.4-2.5 GHz ISM band applications. The MMIC provides a typical gain of 29 dB and saturation power of more than 33 dBm. Typical bias condition is 7V at 800 mA. The MMIC is a packaged in a standard SO-8 power package.
The copper based carrier of the package allows direct soldering of the device to the PCB for proper heat sinking.
The input and output matching of the MMIC require external components.