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TC3131

Features: • P-1 dB: 30 dBm• Small Signal Gain: 28 dB• Power Added Efficiency: 32 %• IP3: 39 dBm• Bias Condition: 400 mA @ 7 VSpecifications Symbol Parameter/Conditions Min. Max. Units Vdd Drain-Source Voltage 12 Volts Idd Total...

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SeekIC No. : 004513549 Detail

TC3131: Features: • P-1 dB: 30 dBm• Small Signal Gain: 28 dB• Power Added Efficiency: 32 %• IP3: 39 dBm• Bias Condition: 400 mA @ 7 VSpecifications Symbol Parameter/C...

TC3131 Data Sheet

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Part Number:
TC3131
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/26

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Product Details

Description



Features:

• P-1 dB: 30 dBm
• Small Signal Gain: 28 dB
• Power Added Efficiency: 32 %
• IP3: 39 dBm
• Bias Condition: 400 mA @ 7 V





Specifications

Symbol
Parameter/Conditions
Min.
Max.
Units
Vdd
 Drain-Source Voltage
12
Volts
Idd
 Total Drain Current
1500
mA
Pin
 RF Input Power
8
dBm
Pt
 Power Dissipation
6
W
Tch
 Operating Channel Temperature
175
TSTG
 Storage Temperature
-65
175
Note:
1. This GaAs MMIC is susceptible to damage from Electrostatic Discharge. Proper precautions
should be used when handling these devices.
2. Specifications subject to change without notice.




Description

The TC3131 is a 2 stage PHEMT MMIC power amplifier. It is designed for use in low cost and high volume 2.4-2.5 GHz ISM band applications. The MMIC provides a typical gain of 26 dB and saturation power of more than 30 dBm. Typical bias condition is 7V at 400 mA. The MMIC is packaged in a standard SO-8 power package. The copper based carrier of the package allows direct soldering of the device to the PCB for proper heat sinking. The input and output matching of the MMIC require external components.






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