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TC2896

Features: • 5 W Typical Power at 6 GHz• 8 dB Typical Linear Power Gain at 6 GHz• High Linearity: IP3 = 47 dBm Typical at 6 Ghz• High Power Added Efficiency: Nominal PAE of 40 % at 6 GHz• Suitable for High Reliability Application• Lg = 0.6 µm, Wg = 12 mm...

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SeekIC No. : 004513538 Detail

TC2896: Features: • 5 W Typical Power at 6 GHz• 8 dB Typical Linear Power Gain at 6 GHz• High Linearity: IP3 = 47 dBm Typical at 6 Ghz• High Power Added Efficiency: Nominal PAE of 40...

TC2896 Data Sheet

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Part Number:
TC2896
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/12

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Product Details

Description



Features:

• 5 W Typical Power at 6 GHz
• 8 dB Typical Linear Power Gain at 6 GHz
• High Linearity: IP3 = 47 dBm Typical at 6 Ghz
• High Power Added Efficiency: Nominal PAE of 40 % at 6 GHz
• Suitable for High Reliability Application
• Lg = 0.6 µm, Wg = 12 mm
• Tight Vp ranges control
• High RF input power handling capability
• 100 % DC and RF Tested
• Flange Ceramic Package PHOTO ENLARGEMENT


Specifications

Symbol
Parameter
Rating
VDS
 Drain-Source Voltage
12 V
VGS
 Gate-Source Voltage
-5 V
IDS
 Drain Current
IDSS
Pin
 RF Input Power, CW
33 dBm
PT
 Continuous Dissipation
12 W
TCH
 Channel Temperature
175
TSTG
 Storage Temperature
- 65to +175



Description

The TC2896 is packaged with the TC1806 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for commercial and military high performance power applications.




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