TC285SPD-B0

Package / Case :
Packaging :
Type : Image Sensors
Operating Supply Voltage : 13.5 V to 14.5 V
Image Size : 1004 H x 1002 V
Color Sensing : Monochrome
Maximum Operating Temperature : + 45 C
Minimum Operating Temperature : - 10 C


Features:

• Very Low Noise, Very High Sensitivity, Electronically Variable Charge Domain Gain
• High Resolution, 2/3-in Format, Solid State Charge- Coupled Device (CCD) Frame
Transfer Image Sensor for low light level applications with 30-  Frame/s readout speed.
• 1,006,008 Pixels per Field
• Frame Memory
• 1004 (H) x 1002 (V) Active Pixels in Image Sensing Area Compatible With Electronic Centering
• Multimode Readout Capability
o Progressive Scan
o Line Summing
o Pixel Summing
• Serial Register 0-8V Clocking (except CMG gate)
• Continuous Electronic Exposure Control from 1/30 s to 1/5,000 s
• 8.0 um Square Pixels
• Advanced Lateral Overflow Drain
• Low Dark Current
• High Photo response Uniformity Over a Wide Spectral Range
• Solid State Reliability With No
Image Burn-in, Residual
Imaging, Image Distortion,
Image Lag, or Microphonics
• Package with peltier cooler


Pinout




Specifications

Supply voltage range, Vss: VDD, VCLD (see Note1) .... 0V to + 15V
Supply voltage range, Vss: ODB............. 0V to + 22V
Supply voltage range, Vss: FP, VREFG .......... 0V to + 8V
Input voltage range, Vi: IAG, SAG.... ........ - 8V to + 8V
Input voltage range, Vi: SRG, RST........... 0V to + 10V
Input voltage range, Vi: CMG ............. -5V to + 23V
Supply voltage range, Vcool: P+ (see Note2)......... 0V to + 7V
Supply current range, Icool: P+ (see Note2) ...... 0A to 1.8A
Operating free-air temperature range, Ta ......... -10 to 45
Storage temperature range, Tstg ............ -30 to 85
Operating case temperature range ................-10 to 55
Dew point of package inside gas (see Note2).......... Less than -20
* Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect the device reliability.
Note 1: All voltage values are with respect to substrate terminal.
Note 2: Peltier cooler generates heat during cooling process. To keep the case temperature range, the heat must be removed through an external heat sink. See Figure 12 for reference of CCD temperature vs Icool.
In order to avoid condensation upon the surface do not cool the CCD to less than -20 degrees C.
Be careful when attaching external heat sink to package. Fastening it too strongly may crack or puncture the package, making it susceptible to moisture or humidity.

Description

The TC285SPD is a 1004x1002 30-Frame/s readout, frame-transfer CCD image sensor designed for use in black and white, bio-medical, and special-purpose applications requiring high sensitivity, high speed, high resolution, and low noise.

The TC285SPD is a new device of the IMPACTRONTM family of very-low noise, high sensitivity, high-speed, and high-resolution image sensors that multiply charge directly in the charge domain before conversion to voltage. The charge carrier multiplication (CCM) is achieved by using a low-noise single-carrier, impact ionization process that occurs during repeated carrier transfers through high field regions. Applying multiplication pulses to specially designed gates activates the CCM. The amount of multiplication gain is adjustable depending on the amplitude of multiplication pulses. The device function resembles the function of an image intensifier implemented in solid state.

The image-sensing area of the TC285SPD is configured into 1002 lines with 1004 pixels in each line. 28 pixels are reserved in each line for dark reference. The blooming protection is based on an advanced lateral overflow drain concept that does not reduce NIR response. The sensor can be operated in the progressive scan mode and can capture a full 1,006,008 pixels in one image field. The frame transfer from the image sensing area to the memory area is accomplished at a high rate that minimizes image smear. The electronic exposure control is achieved by clearing the unwanted charge from the image area using a short positive pulse applied to the anti-blooming drain. This marks the beginning of the integration time, which can be arbitrarily shortened from its nominal length. After charge is integrated and stored in the memory it is available for readout in the next cycle. This is accomplished by using a unique serial register design that includes special charge multiplication pixels.

The TC285SPD sensor is built using TI-proprietary advanced Split-Gate Virtual-Phase CCD (SGVPCCD) technology, which provides devices with wide spectral response, high quantum efficiency (QE), low dark current, and high response uniformity.