Features: • 2 W Typical Output Power at 2.45 GHz• 14 dB Typical Linear Power Gain at 2.45 GHz• High Linearity: IP3 = 43 dBm Typical at 2.45 GHz• High Power Added Efficiency: Nominal PAE of 43 % at 2.45 GHz• Suitable for High Reliability Application• Breakdown Vo...
TC2696: Features: • 2 W Typical Output Power at 2.45 GHz• 14 dB Typical Linear Power Gain at 2.45 GHz• High Linearity: IP3 = 43 dBm Typical at 2.45 GHz• High Power Added Efficiency: ...
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Symbol |
Parameter |
Rating |
VDS |
Drain-Source Voltage |
12 V |
VGS |
Gate-Source Voltage |
-5 V |
IDS |
Drain Current |
IDSS |
Pin |
RF Input Power, CW |
26 dBm |
PT |
Continuous Dissipation |
7.7W |
TCH |
Channel Temperature |
175 |
TSTG |
Storage Temperature |
- 65 to +175 |
The TC2696 is packaged with the TC1606 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifier for commercial applications including Cellular/PCS systems, and military high performance power amplifier.