TC2696

Features: • 2 W Typical Output Power at 2.45 GHz• 14 dB Typical Linear Power Gain at 2.45 GHz• High Linearity: IP3 = 43 dBm Typical at 2.45 GHz• High Power Added Efficiency: Nominal PAE of 43 % at 2.45 GHz• Suitable for High Reliability Application• Breakdown Vo...

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TC2696 Picture
SeekIC No. : 004513534 Detail

TC2696: Features: • 2 W Typical Output Power at 2.45 GHz• 14 dB Typical Linear Power Gain at 2.45 GHz• High Linearity: IP3 = 43 dBm Typical at 2.45 GHz• High Power Added Efficiency: ...

floor Price/Ceiling Price

Part Number:
TC2696
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/12

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Product Details

Description



Features:

• 2 W Typical Output Power at 2.45 GHz
• 14 dB Typical Linear Power Gain at 2.45 GHz
• High Linearity: IP3 = 43 dBm Typical at 2.45 GHz
• High Power Added Efficiency: Nominal PAE of 43 % at 2.45 GHz
• Suitable for High Reliability Application
• Breakdown Voltage: BVDGO 18 V
• Lg = 0.6 µm, Wg = 5 mm
• 100 % DC Tested
• Flange Ceramic Package



Specifications

Symbol
Parameter
Rating
VDS
Drain-Source Voltage
12 V
VGS
Gate-Source Voltage
-5 V
IDS
Drain Current
IDSS
Pin
RF Input Power, CW
26 dBm
PT
Continuous Dissipation
7.7W
TCH
Channel Temperature
175
TSTG
Storage Temperature
- 65 to +175



Description

The TC2696 is packaged with the TC1606 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifier for commercial applications including Cellular/PCS systems, and military high performance power amplifier.




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