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TC2676

Features: · 2 W Typical Output Power at 6 GHz PHOTO ENLARGEMENT·9 dB Typical Linear Power Gain at 6 GHz·High Linearity: IP3 = 43 dBm Typical at 6 GHz·High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz·Suitable for High Reliability Application· Breakdown Voltage:BVDGO ³ 18 V· Lg = 0.6 m...

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SeekIC No. : 004513530 Detail

TC2676: Features: · 2 W Typical Output Power at 6 GHz PHOTO ENLARGEMENT·9 dB Typical Linear Power Gain at 6 GHz·High Linearity: IP3 = 43 dBm Typical at 6 GHz·High Power Added Efficiency: Nominal PAE of 43 %...

TC2676 Data Sheet

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Part Number:
TC2676
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/12

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Product Details

Description



Features:

· 2 W Typical Output Power at 6 GHz PHOTO ENLARGEMENT
·9 dB Typical Linear Power Gain at 6 GHz
·High Linearity: IP3 = 43 dBm Typical at 6 GHz
·High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz
·Suitable for High Reliability Application
· Breakdown Voltage:BVDGO ³ 18 V
· Lg = 0.6 mm, Wg = 5 mm
·Tight Vp ranges control
· High RF input power handling capability
·100 % DC Tested
· Low Cost Ceramic Package


Specifications

Symbol Parameter Rating
VDS Drain-Source Voltage 12 V
VGS Gate-Source Voltage -5 V
IDS Drain Current IDSS
Pin RF Input Power, CW 30 dBm
PT Continuous Dissipation 7.7 W
TCH Channel Temperature 175
TSTG Storage Temperature - 65 to +175



Description

The TC2676 is packaged with the TC1606 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip.

The Cu-based ceramic package provides excellent thermal conductivity for the GaAs FET. All devices are 100% DC tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for commercial and military high performance power applications.




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