TC246CYM-B0

• Very Low Noise, Very High Sensitivity, Electronically Variable Charge Domain Gain
• 1/2-in Format, Solid State Charge-Coupled Device (CCD) Frame Interline Transfer Color Image Sensor for Low Light Level Applications with 60 Fields/s readout speed
• Cy, Ye, Mg, and G Complementary Mosaic Filters on Chip
• 340,000 Pixels per Field
• Frame Memory
• 658 (H) x 496 (V) Active Pixels in Image Sensing Area
• Pseudo-Interlace Scan
• 0-8V Serial Operation Except CMG Gate
• Continuous Electronic Exposure Control from 1/60 s to 1/2,000 s
• Advanced Lateral Overflow Drain
• 10.0 um Square Pixels
• Low Dark Current
• High Photo response Uniformity Over a Wide Spectral Range
• Solid State Reliability With No Image Burn-in, Residual Imaging, Image Distortion, or Microphonics
• Package with built-in Peltier Cooler and Temperature Sensor

Supply voltage range, Vss: VDD, VCLD (see Note1) ..........0V to 15V
Supply voltage range, Vss: ODB ........................................0V to 22V
Input voltage range, Vi: IAG1, SAG1, SAG2 ...................- 10V to 10V
Input voltage range, Vi: IAG2 ........................................- 10V to 13V
Input voltage range, Vi: SRG1, SRG2, RST......................... 0V to 10V
Input voltage range, Vi: CMG ...........................................-5V to 22V
Supply voltage range, Vcool: P+ (see Note2).................. 0V to 5.5V
Supply current range, Icool: P+ (see Note2).................... 0A to 1.4A
Supply current range, Ith: THER ..................................0A to 0.31mA
Operating free-air temperature range, Ta ...................-20 to 55
Storage temperature range, Tstg................................ -30 to 85
Dew point inside the package (see Note2).............. Less than -20

* Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect the device reliability.
Notes:
1. All voltage values are with respect to substrate terminal.
2. The Peltier cooler generates heat during cooling process. Heat must be removed through an external heat sink. In order to avoid condensation upon the surface do not cool the CCD to less than -20 degrees C.

The TC246CYM is a frame interline transfer CCD image sensor designed for use in single-chip color NTSC TV, computer, and special-purpose applications requiring low noise, high sensitivity, high speed and low smear.

The TC246CYM is a new device of the IMPACTRON^TM family of very-low noise, high sensitivity, high speed and low smear sensors that multiply charge directly in the charge domain before conversion to voltage. The charge carrier multiplication (CCM) is achieved by using a low-noise single-carrier, impact ionization process that occurs during repeated carrier transfers through high field regions. Applying multiplication pulses to specially designed gates activates the CCM. Multiplication gain is variable by adjusting the amplitude of the multiplication pulses. The device function resembles the function of an image intensifier implemented in solid state.

The image-sensing area of the TC246CYM is configured into 500 lines with 680 pixels in each line. 20 pixels are reserved in each line for dark reference. The blooming protection is based on an advanced lateral overflow drain concept that does not reduce NIR response. The frame interline transfer from the image sensing area to the memory area is implemented to minimize image smear. After charge is integrated and stored in the memory it is available for readout in the next cycle. This is accomplished by using a unique serial register design that includes special charge multiplication pixels.

The TC246CYM sensor is built using TI-proprietary advanced Split-Gate Virtual-Phase CCD (SGVPCCD) technology, which provides devices with wide spectral response, high quantum efficiency (QE), low dark current, and high response uniformity.