TC1102 Selling Leads, Price trend, TC1102 DataSheet download, circuit diagram from SeekIC.com

Features: • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz• High Associated Gain: Ga = 13 dB Typical at 12 GHz• Lg = 0.25 m, Wg = 160 m• All-Gold Metallization for High Reliability• 100 % DC TestedSpecifications Symbol Parameter Rating VDS Drain-...

See larger image

SeekIC No. : 004512990 Detail

TC1102: Features: • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz• High Associated Gain: Ga = 13 dB Typical at 12 GHz• Lg = 0.25 m, Wg = 160 m• All-Gold Metallization for High Reli...

TC1102 Data Sheet

Get Latest Price

Part Number:: TC1102
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2024/11/4

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Recent History
What is this?

TC110 evaluate
Features: • Assured Start-up at 0.9V• 50µA (Typ) Supply Current (fOSC = 100kHz)&...
TC1100H evaluate
Features: Oxide Glass Passivated JunctionBidirectional protection in a single deviceSurge capabili...
TC1101 evaluate
Features: • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz• High Associated Gain: Ga ...

Product Details

Description

Features:

• Low Noise Figure: NF = 0.5 dB Typical at 12 GHz
• High Associated Gain: Ga = 13 dB Typical at 12 GHz
• Lg = 0.25 m, Wg = 160 m
• All-Gold Metallization for High Reliability
• 100 % DC Tested

Specifications

Symbol	Parameter	Rating
V_DS	Drain-Source Voltage	5 V
V_GS	Gate-Source Voltage	-3.0 V
I_DS	Drain Current	I_DSS
I_GS	Gate Current	160 A
P_in	RF Input Power, CW	14 dBm
P_T	Continuous Dissipation	150 mW
T_CH	Channel Temperature	175
T_STG	Storage Temperature	- 65 to +175

Description

The TC1102 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure and high associated gain. The device can be used in circuits up to 40 GHz and suitable for low noise application including a wide range of commercial and military applications. All devices ar e 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.

Customers Who Bought This Item Also Bought

TC110303ECTTR
US $$0.10 - 1.00 / Piece

Supply Ability:10000Week

View details
TC110G08AT-0404
US $$3.00 - 5.00 / Piece

Supply Ability:10000Day

View details
Single-channel DC motor drives TC117HS
US $$0.10 - 0.20 / Piece

Supply Ability:1000000Day

View details
BT06蓝牙串口模块 51单片机兼容HC-06
US $$1.30 - 1.50 / Piece

Supply Ability:100Day

View details
PM150RSA060-S81AH0G,IGBT
US $$41.70 - 42.00 / Piece

Supply Ability:10Day

View details

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.

TC1102

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Description

Customers Who Bought This Item Also Bought

Potentiometers, Variable Resistors(1370)

Power Supplies - Board Mount(3035)

Switches(5620)

Test Equipment(3237)

Hardware, Fasteners, Accessories(2239)

Cables, Wires(3584)