Position: Home  > All Categories> Integrated Circuits (ICs) > TC1101

TC1101

Features: • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz• High Associated Gain: Ga = 12 dB Typical at 12 GHz• High Dynamic Range: 1 dB Compression Power P-1 = 18 dBm at 12 GHz• Breakdown Voltage: BVDGO 9 V• Lg = 0.25 m, Wg = 160 m• All-Gold Metallization for...

product image

TC1101 Picture
See larger image
SeekIC No. : 004512989 Detail

TC1101: Features: • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz• High Associated Gain: Ga = 12 dB Typical at 12 GHz• High Dynamic Range: 1 dB Compression Power P-1 = 18 dBm at 12 GHz&#...

TC1101 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
TC1101
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/4

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Low Noise Figure: NF = 0.5 dB Typical at 12 GHz
• High Associated Gain: Ga = 12 dB Typical at 12 GHz
• High Dynamic Range: 1 dB Compression Power P-1 = 18 dBm at 12 GHz
• Breakdown Voltage: BVDGO 9 V
• Lg = 0.25 m, Wg = 160 m
• All-Gold Metallization for High Reliability
• 100 % DC Tested


Specifications

Symbol
Parameter
Rating
VDS
Drain-Source Voltage
7.0 V
VGS
Gate-Source Voltage
-3.0 V
IDS
Drain Current
IDSS
IGS
Gate Current
160 A
Pin
RF Input Power, CW
14 dBm
PT
Continuous Dissipation
150 mW
TCH
Channel Temperature
175
TSTG
Storage Temperature
- 65 to +175



Description

The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40 GHz and suitable for low noise and medium power amplifier applications including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Integrated Circuits (ICs)
TA8435H
1MB12-140
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Connectors, Interconnects
ASP-134488-01
WM4078-ND
View more