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TC1101

Features: • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz• High Associated Gain: Ga = 12 dB Typical at 12 GHz• High Dynamic Range: 1 dB Compression Power P-1 = 18 dBm at 12 GHz• Breakdown Voltage: BVDGO 9 V• Lg = 0.25 m, Wg = 160 m• All-Gold Metallization for...

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SeekIC No. : 004512989 Detail

TC1101: Features: • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz• High Associated Gain: Ga = 12 dB Typical at 12 GHz• High Dynamic Range: 1 dB Compression Power P-1 = 18 dBm at 12 GHz&#...

TC1101 Data Sheet

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Part Number:
TC1101
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• Low Noise Figure: NF = 0.5 dB Typical at 12 GHz
• High Associated Gain: Ga = 12 dB Typical at 12 GHz
• High Dynamic Range: 1 dB Compression Power P-1 = 18 dBm at 12 GHz
• Breakdown Voltage: BVDGO 9 V
• Lg = 0.25 m, Wg = 160 m
• All-Gold Metallization for High Reliability
• 100 % DC Tested


Specifications

Symbol
Parameter
Rating
VDS
Drain-Source Voltage
7.0 V
VGS
Gate-Source Voltage
-3.0 V
IDS
Drain Current
IDSS
IGS
Gate Current
160 A
Pin
RF Input Power, CW
14 dBm
PT
Continuous Dissipation
150 mW
TCH
Channel Temperature
175
TSTG
Storage Temperature
- 65 to +175



Description

The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40 GHz and suitable for low noise and medium power amplifier applications including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.




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