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TB9NK60ZD

Features: YPICAL RDS(on) = 0.85 Ω ERY HIGH dv/dt CAPABILITY 00% AVALANCHE TESTED ATE CHARGE MINIMIZED OW INTRINSIC CAPACITANCES AST INTERNAL RECOVERY DIODEApplication ID BALLAST VS PHASE-SHIFT FULL BRIDGE CONVERTERSSpecifications Symbol Parameter Value Unit TO-220 / D2PA...

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TB9NK60ZD: Features: YPICAL RDS(on) = 0.85 Ω ERY HIGH dv/dt CAPABILITY 00% AVALANCHE TESTED ATE CHARGE MINIMIZED OW INTRINSIC CAPACITANCES AST INTERNAL RECOVERY DIODEApplication ID BALLAST VS PHASE-SHIF...

TB9NK60ZD Data Sheet

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Part Number:
TB9NK60ZD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/19

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Product Details

Description



Features:

YPICAL RDS(on) = 0.85 Ω
ERY HIGH dv/dt CAPABILITY
00% AVALANCHE TESTED
ATE CHARGE MINIMIZED
OW INTRINSIC CAPACITANCES
AST INTERNAL RECOVERY DIODE


Application

ID BALLAST
VS PHASE-SHIFT FULL BRIDGE
    CONVERTERS


Specifications

Symbol
Parameter
Value
Unit
TO-220 / D2PAK
TO-220FP
VDS
Drain-source Voltage (VGS = 0)
600
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
600
V
VGS
Gate- source Voltage
± 30
V
ID
Drain Current (continuous)at TC =25
7.0
7.0*)
A
ID
Drain Current (continuous)at TC =100
4.3
4.3(*)
A
IDM ()
Drain Current (pulsed)
28
28(*) 
A
PTOT
Total Dissipation at TC = 25
125
30
W
Derating Factor
1
0.24
W/
VESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
4000
V
dv/dt (1)
Peak Diode Recovery voltage slope
15
V /ns
VISO
Insulation Withstand Voltage (DC)
-
2500
V
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-55 to 150




Description

The TB9NK60ZD SuperFREDMesh™ series associates all ad-vantages of reduced on-resistance, zener gate pro-tection and very high dv/dt capability with a Fast body-drain recovery diode. Such series comple-ments the "FDmesh™" Advanced Technology.


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