Features: YPICAL RDS(on) = 0.85 ΩXTREMELY HIGH dv/dt CAPABILITY MPROVED ESD CAPABILITY 00% AVALANCHE RATED ATE CHARGE MINIMIZED ERY LOW INTRINSIC CAPACITANCES ERY GOOD MANUFACTURING PEATIBILITYApplicationHIGH CURRENT, HIGH SPEED SWITCHINGIDEAL FOR OFF-LINE POWER SUPPLIES, APTORS AND PFCSp...
TB9NK60Z-1: Features: YPICAL RDS(on) = 0.85 ΩXTREMELY HIGH dv/dt CAPABILITY MPROVED ESD CAPABILITY 00% AVALANCHE RATED ATE CHARGE MINIMIZED ERY LOW INTRINSIC CAPACITANCES ERY GOOD MANUFACTURING PEATIBIL...
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Symbol |
Parameter |
Value |
Unit | |
---|---|---|---|---|
TO-220 / D2PAK / I2PAK |
TO-220FP | |||
VDS |
Drain-source Voltage (VGS = 0) |
600 |
V | |
VDGR |
Drain-gate Voltage (RGS = 20 kΩ) |
600 |
V | |
VGS |
Gate- source Voltage |
± 30 |
V | |
ID |
Drain Current (continuous)at TC =25 |
7 |
7(*) |
A |
ID |
Drain Current (continuous)at TC =100 |
4.4 |
4.4(*) |
A |
IDM () |
Drain Current (pulsed) |
28 |
28(*) |
A |
PTOT |
Total Dissipation at TC = 25 |
125 |
30 |
W |
Derating Factor |
1 |
0.24 |
W/ | |
VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5KΩ) |
4000 |
V | |
dv/dt (1) |
Peak Diode Recovery voltage slope |
4.5 |
V /ns | |
VISO |
Insulation Withstand Voltage (DC) |
- |
2500 |
V |
Tj Tstg |
Operating Junction Temperature Storage Temperature |
55 to 150 55 to 150 |
|
The TB9NK60Z-1 SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is tak-en to ensure a very good dv/dt capability for the most demanding applications. Such series comple-ments ST full range of high voltage MOSFETs in-cluding revolutionary MDmesh™ products.