TAS5111DADR

Available Set Gain :
Common Mode Rejection Ratio (Min) :
Operating Supply Voltage :
Maximum Power Dissipation :
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 70 C
Package / Case : HTSSOP-32
THD plus Noise : 0.2 %
Output Type : 1-Channel Mono
Product : Class-AB
Supply Current : 1 mA
Output Power : 93 W


Description

The TAS5111DADR belongs to TAS5111A family. The TAS5111A is a high-performance digital amplifier power stage designed to drive a 4-Ω speaker up to 70 W with 0.2% distortion plus noise. The device incorporates TI's PurePath Digital technology and is used with a digital audio PWM processor (TAS50XX) and a simple passive demodulation filter to deliver high-quality, high-efficiency digital audio amplification. The efficiency of this digital amplifier can be greater than 90%, depending on the system design. Overcurrent protection, overtemperature protection, and undervoltage protection are built into the TAS5111A, safeguarding the device and speakers against fault conditions that could damage the system.

The features of TAS5111DADR are (1)70-W RMS Power (BTL) into 4 Ω with less than 0.2% THD+N; (2)95-dB dynamic range (TDAA system with TAS5026); (3)power efficiency greater than 90% into 4-Ω and 8-Ω loads(smaller power supplies); (4)self-protecting design with autorecovery); (5)3.3-V digital interface; (6)32-Pin TSSOP (DAD) powerPADTM package; (7)EMI-compliant when used with recommended system design. the TAS5111DADR can be used in DVD receiver; home theatre; mini/micro component systems; internet music appliance.

The absolute maximum ratings about TAS5111DADR (over operating free-air temperature range unless otherwise noted(1: Stresses beyond those listed under "absolute maximum ratingsmay cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.))are (1)DVDD TO DGND: -0.3 V to 4.2 V; (2)GVDD TO GND: 33.5 V; (3)PVDD_X TO GND (dc voltage): 33.5 V; PVDD_X TO GND (spike voltage(2: The duration of voltage spike should be less than 100 ns; see application note SLEA025.)): 48 V; (4)OUT_X TO GND (dc voltage): 33.5 V; (5)OUT_X TO GND (spike voltage(2)): 48 V; (6)BST_X TO GND (dc voltage): 48 V; (7)BST_X TO GND (spike voltage(2)): 53 V; (8)GREG TO GND (3:  GREG is treated as an input when the GREG pin is overdriven by GVDD of 12 V.): 14.2 V; (9)PWM_XP, RESET, M1, M2, M3, SD,OTW: -0.3 V to DVDD + 0.3 V; (10)maximum operating junction temperature, TJ: -40°C to 150°C; (11)storage temperature: -40°C to 125°C.

Parameters:

Technical/Catalog Information	TAS5111DADR
Vendor	Texas Instruments
Category	Integrated Circuits (ICs)
Package / Case	32-TSSOP Exposed Pad, 32-eTSSOP, 32-HTSSOP
Type	Class D
Output Type	1-Channel (Mono)
Voltage - Supply	3 V ~ 3.6 V
Packaging	Tape & Reel (TR)
Features	Digital Inputs, Mute, Short-Circuit and Thermal Protection, Shutdown
Max Output Power x Channels @ Load	93W x 1 @ 4 Ohm
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TAS5111DADR TAS5111DADR