Features: • Fast Address Access Times : 10/12/15ns• Single 3.3V ±0.3V power supply• Center power/ground pin configuration• Low Power Consumption : 110/105/100mA• TTL I/O compatible• 2.0V data retention mode• Automatic power-down when deselected• Avai...
T14L1024N: Features: • Fast Address Access Times : 10/12/15ns• Single 3.3V ±0.3V power supply• Center power/ground pin configuration• Low Power Consumption : 110/105/100mA• TTL I/...
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PARAMETER |
SYM |
RATING |
UNIT |
Power Supply Voltage |
Vcc |
-0.5 to 4.6 |
V |
Input Voltage |
VIN |
-0.5 to Vcc+0.5 |
V |
Output Voltage |
VOUT |
-0.5 to Vcc+0.5 |
V |
Operating Temperatrue |
TOPR |
0 to +70 |
°C |
Storage Temperature |
TSTG |
-55 to +150 |
°C |
Power Dissipation |
PD |
1.0 |
W |
Short Circuit Output Current |
IOUT |
50 |
mA |
The T14L1024N is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. T14L1024N is designed for use in high performance memory applications such as main memory storage and high speed communication buffers. Fabricated using high performance CMOS technology, access times down to 10ns are achieved.