SiB406EDK

The SiB406EDK is designed as one kind of N-Channel 20-V (D-S) MOSFET device that can be used in wide range of applications such as (1)load switch for portable applications; (2)high frequency DC/DC converter. Also this device has some points of features:(1)Halogen-free According to IEC 61249-2-21; (2)TrenchFET-Power MOSFET; (3)New Thermally Enhanced PowerPAK SC-75 Package: Small Footprint Area and Low On-Resistance; (4)Typical ESD Protection 560 V.

The absolute maximum ratings of the SiB406EDK can be summarized as:(1)Drain-Source Voltage: 20 V;(2)Gate-Source Voltage: +/-12 V;(3)Continuous Drain Current (TJ = 150 °C): 4.1 or 6 A;(4)Pulsed Drain Current: 15 A;(5)Continuous Source-Drain Diode Current: 1.6 or 6 A;(6)Maximum Power Dissipation: 1.25 to 10 W;(7)Operating Junction and Storage Temperature Range: -55 to 150;(8)Soldering Recommendations (Peak Temperature): 260.

The electrical characteristics of SiB406EDK can be summarized as:(1)Drain-Source Breakdown Voltage: 20 V;(2)VDS Temperature Coefficient: 23 mV/;(3)VGS(th) Temperature Coefficient: -3.3 mV/;(4)Gate-Source Threshold Voltage: 0.6 to 1.4 V;(5)Gate-Source Leakage: +/-8 uA;(6)Zero Gate Voltage Drain Current: -1 or -10 uA;(7)On-State Drain Current: 10 A. If you want to know more information about the SiB406EDK, please download the datasheet in www.seekic.com or www.chinaicmart.com .