SIB406EDK-T1-GE3, US $ .2-.41 , Vishay/Siliconix, SIB406EDK-T1-GE3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00153250 Detail

SIB406EDK-T1-GE3: MOSFET 20V 6.0A 10W 46mohm @ 4.5V

SIB406EDK-T1-GE3 Data Sheet

US $ .2~.41 / Piece | Get Latest Price

Part Number:: SIB406EDK-T1-GE3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

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0~1
1~10
10~100
100~250

Unit Price
$.41
$.28
$.24
$.2

Processing time
15 Days
15 Days
15 Days
15 Days

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Upload time: 2024/11/24

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Recent History
What is this?

SiB406EDK evaluate
DescriptionSiB406EDK N-Channel 20-V (D-S) MOSFET The SiB406EDK is designed as one kind of N-Chann...
SiB408DK evaluate
DescriptionSiB408DK N-Channel 30-V (D-S) MOSFET
SiB408DK-T1-GE3 evaluate
US $.18 - .36 / Piece

MOSFET 30V 7.0A 13W 40mohm @ 10V

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	20 V
Gate-Source Breakdown Voltage :	+/- 12 V	Continuous Drain Current :	5.1 A
Resistance Drain-Source RDS (on) :	46 mOhms at 4.5 V	Configuration :	Single Quad Drain
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SC-75-6	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V
Configuration : Single Quad Drain
Package / Case : SC-75-6
Continuous Drain Current : 5.1 A
Resistance Drain-Source RDS (on) : 46 mOhms at 4.5 V

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SIB406EDK-T1-GE3

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