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Specifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 20 20 V Gate-Source Voltage VGS ±12 ±12 Continuous Drain Current TA = 25 ID 8.5 9 A TA = 85 6.4 6.4 Pulsed Drain Current IDM 30 30 Continuous Source Current (MOSFET Diode ...

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SeekIC No. : 004490795 Detail

Si7900EDN: Specifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 20 20 V Gate-Source Voltage VGS ±12 ±12 Continuous Drain Current TA = 25 ID 8.5 9 A ...

Si7900EDN Data Sheet

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Part Number:: Si7900EDN
Supply Ability:: 5000

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Upload time: 2024/12/25

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Si7900AEDN evaluate
Specifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 2...
SI7900AEDN-T1-E3 evaluate
US $.69 - 1.12 / Piece

MOSFET 20V 8.5A 1.5W
SI7900AEDN-T1-GE3 evaluate
US $.25 - .34 / Piece

MOSFET 20V 8.5A 3.1W 26mohm @ 4.5V

Product Details

Description

Specifications

Parameter		Symbol	10 secs	Steady State	Unit
Drain-Source Voltage		V_DS	20	20	V
Gate-Source Voltage		V_GS	±12	±12	V
Continuous Drain Current	T_A= 25	I_D	8.5	9	A
Continuous Drain Current	T_A = 85	I_D	6.4	6.4
Pulsed Drain Current		I_DM	30	30
Continuous Source Current (MOSFET Diode Conduction)		I_S	2.9	2.9
Maximum Power Dissipationa	T_A= 25	P_D	2.9	3.2	W
Maximum Power Dissipationa	T_A= 85	P_D	3.1	1.7	W
Operating Junction and Storage Temperature Range		T_J,& T_stg	-55 to 150	-55 to 150	/W
Maximum Junction-to-Ambient		R_thJA	23	23

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Si7900EDN

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