SI7900AEDN-T1-GE3, US $ .25-.34 , Vishay/Siliconix, SI7900AEDN-T1-GE3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00157476 Detail

SI7900AEDN-T1-GE3: MOSFET 20V 8.5A 3.1W 26mohm @ 4.5V

SI7900AEDN-T1-GE3 Data Sheet

US $ .25~.34 / Piece | Get Latest Price

Part Number:: SI7900AEDN-T1-GE3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

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Qty
0~1830
1830~3000
3000~6000
6000~12000

Unit Price
$.34
$.27
$.26
$.25

Processing time
15 Days
15 Days
15 Days
15 Days

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Upload time: 2024/12/25

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Recent History
What is this?

Si7900AEDN evaluate
Specifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 2...
SI7900AEDN-T1-E3 evaluate
US $.69 - 1.12 / Piece

MOSFET 20V 8.5A 1.5W
Si7900EDN evaluate
Specifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 2...

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	20 V
Gate-Source Breakdown Voltage :	+/- 12 V	Continuous Drain Current :	6 A
Resistance Drain-Source RDS (on) :	26 mOhms	Configuration :	Dual
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	PowerPAK 1212-8	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Resistance Drain-Source RDS (on) : 26 mOhms
Continuous Drain Current : 6 A
Configuration : Dual
Package / Case : PowerPAK 1212-8
Gate-Source Breakdown Voltage : +/- 12 V

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SI7900AEDN-T1-GE3

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