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Si7703EDN

Features: · TrenchFET® Power MOSFETS: 1.8-V Rated· ESD Protected: 4500 V· Ultra-Low Thermal Resistance, PowerPAK™Package with Low 1.07-mm ProfileSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage (MOSFET and Schottky) VDS -20 V Reverse Voltag...

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SeekIC No. : 004490741 Detail

Si7703EDN: Features: · TrenchFET® Power MOSFETS: 1.8-V Rated· ESD Protected: 4500 V· Ultra-Low Thermal Resistance, PowerPAK™Package with Low 1.07-mm ProfileSpecifications Parameter Symbol 10 s...

Si7703EDN Data Sheet

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Part Number:
Si7703EDN
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· TrenchFET® Power MOSFETS: 1.8-V Rated
· ESD Protected: 4500 V
· Ultra-Low Thermal Resistance, PowerPAK™
Package with Low 1.07-mm Profile




Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage (MOSFET and Schottky) VDS -20 V
Reverse Voltage (Schottky) VKA 20
Gate-Source Voltage (MOSFET) VGS ±12 ±12
Continuous Drain Current (TJ = 150)(MOSFET)a TA = 25 ID -6.3 -4.3 A
TA = 80 -4.5 -3.1
Pulsed Drain Current (MOSFET) IDM -20
Continuous Source Current (Diode Conduction)a IS -2.3 -1.1
Average Foward Current (Schottky) IF 1.0
Pulsed Foward Current (Schottky) IFM 7
Maximum Power Dissipation(MOSFET)a TA = 25 PD 5.4 1.9 W
TA = 80 3.4 1.2
Maximum Power Dissipation (Schottky)a TA = 25 2.0 1.1
TA = 80 1.0 0.6
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 /W





Description

P-Channel 20-V (D-S) MOSFET With Schottky Diode Si7703EDN

· Charger Switching




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