SI7703EDN-T1-E3, US $ .35-.48 , Vishay/Siliconix, SI7703EDN-T1-E3 DataSheet download, circuit diagram from SeekIC.com

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SI7703EDN-T1-E3: MOSFET 20V 6.3A 2.8W

SI7703EDN-T1-E3 Data Sheet

US $ .35~.48 / Piece | Get Latest Price

Part Number:: SI7703EDN-T1-E3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

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1580~3000
3000~6000
6000~12000

Unit Price
$.48
$.39
$.36
$.35

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15 Days
15 Days
15 Days
15 Days

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Upload time: 2024/11/28

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What is this?

Si7703EDN evaluate
Features: · TrenchFET® Power MOSFETS: 1.8-V Rated· ESD Protected: 4500 V· Ultra-Low Thermal Re...
SI7703EDN-T1 evaluate
MOSFET 20V 6.3A 2.8W
SI7703EDN-T1-GE3 evaluate
US $.59 - .96 / Piece

MOSFET 20V 6.3A 2.8W 48mohm @ 4.5V

Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	20 V
Gate-Source Breakdown Voltage :	+/- 12 V	Continuous Drain Current :	4.3 A
Resistance Drain-Source RDS (on) :	48 mOms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	PowerPAK 1212-8	Packaging :	Reel

Description

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Package / Case : PowerPAK 1212-8
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 4.3 A
Resistance Drain-Source RDS (on) : 48 mOms

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SI7703EDN-T1-E3

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